leshan radio com p an y , ltd. LBSS139WT1G 200 mamps 5 0 vo l ts r ds(on) = 3 .5 n - channel devic e packag e shipping orderin g inform a tion LBSS139WT1G sc-70 300 0 t ape & reel j2 = device code m = month code markin g diagram & pin assignment power mosfet 200 mamps, 50 volts nchannel sc70 t ypica l applications are dc?dc converters, power management in portabl e and battery?powered products such as computers, printers, pcmci a cards, cellular and cordless telephones. ? low threshold v oltage (v gs(th ) : 0.5 v ...1.5v) makes it ideal for low voltage applications ? miniature sc?70 surface mount package saves board space symbol value unit draintosource voltage v dss 50 vdc gatetosource voltage continuous v gs 20 vdc drain current continuous @ t a = 2 5 c pulsed drain current (t p 10 m s) i d i dm 200 800 ma total power dissipation @ t a = 25 c p d 150 mw operating and storage temperature range t j , t stg 55 to 150 c thermal resistance junctiontoambient r q ja 833 c/w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c rating maximum ratings (t a = 25 o c unless otherwise noted) ? pb?fre e package may be a vailable. the g?su f fix denotes a pb?free lead finish lbss139wt3g 1000 0 t ape & reel j2 m ? esd protected:1500v g d s 1 2 3 sot?323 / sc ? 70 sc-70 1 3 2 rev .o 1/5
leshan radio company, ltd. LBSS139WT1G electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (v g s = 0 vdc, i d = 250 m adc) v (br)dss 50 vdc zero gate voltage drain current (v d s = 25 vdc, v g s = 0 vdc) (v d s = 50 vdc, v g s = 0 vdc) i dss 0.1 0.5 m adc gatesource leakage current (v g s = 20 vdc, v d s = 0 vdc) i gss 10 m adc on characteristics (note 1.) gatesource threshold voltage (v d s = v g s , i d = 1.0 madc) v gs(th) 0.5 1.5 vdc static draintosource onresistance (v g s = 2.75 vdc, i d < 200 madc, t a = 4 0 c to +85 c) (v g s = 5.0 vdc, i d = 200 madc) r ds(on) 5.6 10 3.5 ohms forward transconductance (v d s = 25 vdc, i d = 200 madc, f = 1.0 khz) g fs 100 mmhos dynamic characteristics input capacitance (v d s = 25 vdc, v g s = 0, f = 1 mhz) c iss 40 50 pf output capacitance (v d s = 25 vdc, v g s = 0, f = 1 mhz) c o s s 12 25 transfer capacitance (v dg = 25 vdc, v g s = 0, f = 1 mhz) c rss 3.5 5.0 switching characteristics (note 2.) turnon delay time (v t d(on) 20 ns turnoff delay time (v dd = 30 vdc, i d = 0.2 adc,) t d(o f f) 20 1. pulse test: pulse width 300 m s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature. rev .o 2/5
leshan radio company, ltd. LBSS139WT1G typical electrical characteristics r ds(on) , drain-to-source resistance (normalized) figure 1. onregion characteristics 1 t j , junction temperature ( c) figure 2. transfer characteristics figure 3. onresistance variation with temperature v gs = 10 v i d = 0.8 a -55 -5 45 95 145 0.6 0.8 v gs , gate-to-source voltage (volts) 0 4 0 q t , total gate charge (pc) 8 500 v ds = 40 v t j = 25 c 1000 i d = 200 ma 1500 1.2 2 1.4 1.6 1.8 v gs = 4.5 v i d = 0.5 a 2000 10 2 6 v gs(th) , variance (volts) 1 t j , junction temperature ( c) i d = 1.0 ma -55 -5 45 95 145 0.75 0.875 1.125 1.25 0 0.3 0.4 0.1 0.6 0.2 figure 4. threshold voltage variation with temperature 1 1.5 2 2.5 3 i d , drain current (amps) v gs , gate-to-source voltage (volts) figure 5. gate charge v ds = 10 v 150 c 25 c -55 c 3.5 0.5 4 024 10 0 0.3 0.4 v ds , drain-to-source voltage (volts) i d , drain current (amps) 6 0.1 8 0.6 0.2 0.5 13 9 57 v gs = 3.25 v v gs = 2.75 v v gs = 2.5 v v gs = 3.0 v v gs = 3.5 v 0.7 0.8 t j = 25 c 0.7 0.8 0.9 4.5 0.50 2.2 -30 20 70 120 2500 3000 rev .o 3/5
leshan radio company, ltd. LBSS139WT1G typical electrical characteristics r ds(on) , drain-to-source resistance (ohms) figure 6. onresistance versus drain current 0 0.1 0.2 2 5 6 figure 7. onresistance versus drain current i d , drain current (amps) figure 8. onresistance versus drain current 0.001 0.1 1 figure 9. onresistance versus drain current v sd , diode forward voltage (volts) figure 10. body diode forward voltage i d , diode current (amps) 25 c v gs = 2.5 v t j = 150 c 4 0 0.2 0.4 0.6 3 0.01 -55 c 25 c 0.8 r ds(on) , drain-to-source resistance (ohms) 0 0.1 0.2 1 7 i d , drain current (amps) v gs = 2.75 v 5 3 0 120 40 0 80 510 c iss 15 0.05 0.15 0.25 150 c -55 c 6 8 4 2 0.05 0.15 0.25 20 1.0 1.2 150 c 25 c -55 c 8 9 7 100 20 60 figure 11. capacitance r ds(on) , drain-to-source resistance (ohms) 0 0.2 0.4 0.05 1 2.5 3 i d , drain current (amps) 25 c v gs = 4.5 v 2 1.5 r ds(on) , drain-to-source resistance (ohms) 0 0.2 0.4 0.05 1 4 i d , drain current (amps) v gs = 10 v 3 2 0.1 0.3 0.5 150 c -55 c 3.5 4.5 2.5 1.5 0.1 0.3 0.5 150 c 25 c -55 c 4 4.5 3.5 10 1 0.25 0.45 0.15 0.35 5 5.5 6 0.25 0.45 0.15 0.35 25 c oss c rss rev .o 4/5
leshan radio company, ltd. leshan radio company, ltd. LBSS139WT1G sc - 70 a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 xx m xx = specific device code m = date code = pb?free package generic marking diagram *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago or microdot a o, may or may not be present. 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref rev .o 5/5
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